 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS ID25 55A 50A 55A 50A RDS(on) 80m 100m 80m 100m trr 250ns 250ns 250ns 250ns IXFN IXFN IXFK IXFK 55N50 50N50 55N50 50N50 500V 500V 500V 500V IXFK 55N50 500 500 20 30 55 220 55 60 5 560 Maximum Ratings IXFK IXFN 50N50 55N50 500 500 20 30 50 200 50 55 220 55 60 5 600 -55 ... +150 150 -55 ... +150 TO-264 AA (IXFK) IXFN 50N50 V V V V 50 A 200 A 50 A mJ V/ns D S G D S VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight TJ = 25C to 150C TJ = 25C to 150C Continuous Transient TC = 25C T C =25C, TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G W C C C C V~ V~ G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 N/A N/A 0.9/6 N/A 10 N/A 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 20V; VDS = 0V VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 Characteristic Values Min. Typ. Max. 500 2.5 4.5 200 TJ = 25C TJ = 125C 55N50 50N50 25 2 80 100 V V nA A mA m m Features * International standard packages * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density (c) 2002 IXYS All rights reserved 97502F (04/02) IXFK50N50 IXFN50N50 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 * ID25 Note 1 Characteristic Values Min. Typ. Max. 45 9400 1280 460 45 60 120 45 330 55 155 0.22 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Dim. IXFK55N50 IXFN55N50 TO-264 AA Outline Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM IF = 25 A, -di/dt = 100 A/s, VR = 100 V VGS = 0 Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V 55N50 50N50 55N50 50N50 Note 1 Characteristic Values Min. Typ. Max. 55 50 220 200 1.5 250 1.0 10 A A A A V ns C A miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. A B C D Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 Notes: 1. Pulse test, t 300 s, duty cycle d 2 % E F G H J K L M N O P Q R S T U IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK50N50 IXFN50N50 Figure 1. Output Characteristics at 25OC TJ = 25OC VGS = 10V 9V 8V 7V 6V IXFK55N50 IXFN55N50 Figure 2. Output Characteristics at 125OC 100 TJ = 125OC VGS = 10V 9V 8V 7V 6V 140 120 80 ID - Amperes ID - Amperes 100 80 60 40 20 0 60 5V 40 20 0 5V 0 4 8 12 16 20 24 0 4 8 12 16 20 24 VDS - Volts VDS - Volts Figure 3. 2.8 VGS = 10V RDS(on) normalized to 0.5 ID25 value vs. ID 2.2 2.0 1.8 1.6 1.4 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ VGS = 10V RDS(ON) - Normalized 2.0 1.6 TJ = 125OC RDS(ON) - Normalized 2.4 ID = 55A TJ = 25OC 1.2 0.8 ID = 27.5A 1.2 1.0 25 0 20 40 60 80 100 120 50 75 100 125 150 ID - Amperes TJ - Degrees C 60 50 Figure 5. Drain Current vs. Case Temperature 100 IXF_55N50 Figure 6. Admittance Curves 80 ID - Amperes IXF_50N50 ID - Amperes 40 30 20 10 0 TJ = 125oC 60 40 20 0 3.0 TJ = 25oC -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 TC - Degrees C (c) 2002 IXYS All rights reserved VGS - Volts IXFK50N50 IXFN50N50 Figure 7. Gate Charge 12 10 VDS = 250V ID = 27.5A IXFK55N50 IXFN55N50 Figure 8. Capacitance Curves 10000 Ciss f = 1MHz Capacitance - pF VGS - Volts 8 6 4 2 0 Coss 1000 Crss 0 50 100 150 200 250 300 350 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. 100 80 Forward Voltage Drop of the Intrinsic Diode ID - Amperes 60 40 TJ = 125OC 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Figure 10. Transient Thermal Resistance 1.00 R(th)JC - K/W 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
Price & Availability of IXFN55N50
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |